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Physics
Bosyi S.I., Builo S.I. - On synchronization of thermal analysis with acoustic emission and electrometry pp. 1-20

DOI:
10.7256/2453-8884.2016.1.21026

Abstract: The authors examine the methodology of synchronized methods and means of thermal analysis with the method and means of acoustic emission and electrometry. It is demonstrated that the proposed complexation allowed acquiring a multi-parameter vector function of the life cycle of the substance or material being researched, as well as calculate the parameters of their “aging”, since despite the established practice, a proposal is made using thermobaric cycling of the samples, which speeds-up the degradation of their qualities similarly to the process of exploitation. The proposed methodology of complexation of the methods and means of thermal analysis with the method and means of acoustic emission (AE) and electrometry gave rise to a new method – thermobaric densymmetry. The novelty of the proposed approach is protected by two patents registered in the Russian Federation. The main solution for realization of synchronization of the aforementioned methods is the calculation and creation of the melting pot of thermo-electro-dilameter (TED) on the thermoacoustic rod/waveguide (TAWG), which allowed taking the sensory AE sensors out of the zone of high temperatures and pressures.
Apartsev O.R. - Thermoelectric coolers and thermal processes in terms of SPICE modeling pp. 1-12

DOI:
10.7256/2453-8884.2017.2.21379

Abstract: The research subject is adaptation of SPICE-like programs of simulation of electric circuits and thermal processes simultaneously using the example of Peltier thermos-elements. Despite apparent simplicity of such physical object, practice shows that to operate such device one should realize a complex algorithm, since the current of a TE module, which is the only directly managed parameter, determines a complex function of impact on the work of the device. It can be seen when trying to solve the tasks of improvement of thermal stabilization and energy efficiency simultaneously. Recently electronic devices have been developed via computer simulation programs, but such software tools haven’t been used for engineering objects of complex physical nature so far. The author of this work attempts to unite the electronic simulation methods with the consideration of objects of nonelectric nature, i.e. the author offers a computer model of a thermoelectric converter based on the Peltier effect. A thermal part of a simulation model is based on the electrostatic analogy principle with the conversion of thermal values into electric ones. The thermal part of a device is divided into electric-like elements with formation of thermal circuits. The presents SPICE models of a thermoelectric cooler and a thermostat help effectively analyze thermal and electric parameters of a wide range of devices, which contain both internal and boundary sources of heat and cold, including heat pumps based on different physical principles. The author arrives at appropriate coincidence of simulation results and experimental data. It allows using the developed model for solving an inverse problem – analysis of an electric generator based on the Seebeck effect. 
Mustafaev G.A., Mustafaev A.G., Cherkesova N.V. - Reliability of aluminized integrated circuits pp. 1-6

DOI:
10.7256/2453-8884.2017.3.23345

Abstract: Aluminium with its alloys is the basic material of integrated circuits metallization. Use of VLSIC toughens the requirements to the parameters of metallization, which determine its reliability, such as surface resistance, step coating quality, number and sizes of tension-caused voids, and electromigration tolerance. Poor quality of metallization is one of the most dangerous defects in semiconductor technology of integrated circuits. Electromigration can cause failure when passing high-density current through metallization. The materials have been tested in order to estimate the intensity of metal resistance variation caused by electromigration. Based on the results of these tests, the authors conclude that geometrical factors play a dominant role in the mechanism of erosion of integrated circuits metallization caused by electromigration. With regard to the tests, the authors formulate recommendations about the transition from the sputtering technique to evaporation deposition. 
Mustafaev G.A., Panchenko V.A., Cherkesova N.V., Mustafaev A.G. - Influence of technological factors of silicon-on-sapphire structuresТ defects pp. 7-15

DOI:
10.7256/2453-8884.2017.1.22388

Abstract: Silicon-on-sapphire structures serve as a base for the production of radiation-resistant integration circuits, which are very important for space industry, nuclear energetics, and the military sphere. The authors study the silicon-on-sapphire hetero-epitaxial mechanism for the subsequent creation of low-defectiveness transistor structures. Using the Rutherford backscattering, the authors study epitaxial layers of silicon, grown on sapphire substrate. Using the Auger analysis, the authors define the composition and the depth of the transitional layer of silicon-sapphire. The authors ascertain that silicon-to-sapphire bond is performed through tetrahedral sited oxygen. Defectiveness growth can be observed in the regions of spectrum of epitaxial layers, corresponding to the transitional region between the silicon layer and the sapphire substrate, and contributing to ion channeling. Account of an irregular character of the silicon-sapphire transition allows establishing causal link between the charge on the silicon-on-sapphire structure border and leakage current of field emission transistor. The authors develop the method of creation of a semiconductor device with improved parameters both in leakage currents and in structure defects density. 
Zavorotnev Y.D. - Development of the BETA-method of testing and diagnosing of liquid, adhesive and hard materials including those with fire-proof coating (Project 2012-220-03-247) pp. 96-118

DOI:
10.7256/2453-8884.2016.2.20954

Abstract: Since 2010 the Government of the Russian Federation has organized competitions for financial support of scientific research projects, realized under the guidance of the leading foreign scholars for the purpose of achieving the high level research results and creating the “world level laboratories” in universities. But as early as in 2010 the implementation of the “Decree 220” practically broke down due to the large number of applicants (512 projects), while the money was enough only for 40 winners. At that, there were 15 “winners” in Moscow, 6 in St. Petersburg, 4 in Nizhny Novgorod, 3 and 3 in Novosibirsk and Tomsk. In 2011 the “history repeated itself”: 517 applications were registered for the competition, and money was enough only for 39, among them 14 “winners” were in Moscow, 5 in St. Petersburg, 3 and 3 in Nizhny Novgorod and Novosibirsk, 1 in Tomsk. In 2012 half as much projects came for the competition – 719, and only 42 winners got support: among them 15 from Moscow, 5 from St. Petersburg, 2 and 2 from Novgorod and Tomsk and 6 from the Siberian branch of the Russian Academy of Sciences. Here the obvious questions arise: Where did the 1500 unsupported projects go? Were they really “undeserving” the government financial support? This article describes the application project of 2012 No 2012-220-03-247 under the guidance of Doctor of Physical and Mathematical Sciences, Professor Zavjrotnev Yu.D. from Donetsk Institute for Physics and Engineering. The project was aimed at the creation of a unique baro-electro-thermoacoustic (BETA) analyzer, which would leave behind all the existing synchronous thermal analysis (STA) mechanisms, and the interdepartmental laboratory based in Donetsk Institute for Physics and Engineering. 
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